Sfoglia per Autore BACCARANI, GIORGIO
Compact double-gate MOSFET model comprising quantum-mechanical and non-static effects
1999 Baccarani G.; Reggiani S.
A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's
1999 Reggiani S.; Valdinoci M.; Colalongo L.; Baccarani G.
A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects
1999 Baccarani G.; Reggiani S.
Analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices
2000 Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G.
Two-qbit gates based on coupled quantum wires
2000 Reggiani S.; Bertoni A.; Bordone P.; Brunetti R.; Jacoboni C.; Rudan M.; Baccarani G.
Performance limits of CMOS technology and perspectives of quantum devices
2000 Baccarani G.; Reggiani S.
Extraction method for the impact-ionization multiplication factor in silicon at large operating temperatures
2002 Gnani E.; Reggiani S.; Rudan M.; Baccarani G.
Surface mobility in silicon at large operating temperature
2002 Reggiani S.; Valdinoci A.; Colalongo L.; Rudan M.; Baccarani G.; Stricker A.; Illien F.; Felber N.; Fichtner W.; Mettler S.; Lindenkreuz S.; Zullino L.
Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility
2002 Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G.; Stricker A.D.; Illien F.; Felber N.; Fichtner W.; Zullino L.
A single-scan algorithm for connected components labelling in a traffic monitoring application
2003 Bevilacqua A.; Lanza A.; Baccarani G.; Rovatti R.
Determination of the Hall voltage in devices with arbitrary aspect ratio and probe position
2003 Rudan M.; Reggiani S.; Gnani E.; Baccarani G.
A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs
2004 E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs
2004 E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
The density-gradient correction as a disguised pilot wave of de Broglie
2004 Rudan, Massimo; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio
A new approach to the self-consistent solution of the Schrödinger- Poisson equations in nanowire MOSFETs
2004 Gnani E.; Reggiani S.; Rudan M.; Baccarani G.
Investigation about the high temperature impact-ionization coefficient in silicon
2004 S. REGGIANI; M. RUDAN; E. GNANI; G. BACCARANI
Experimental extraction of the electron impact-ionization coefficient at large operating temperatures
2004 S. REGGIANI; M. RUDAN; E. GNANI; BACCARANI G.; C. CORVASCE; D. BARLINI; M. CIAPPA; W. FICHTNER; M. DENISON; N. JENSEN; G. GROOS; M. STECHER
On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs
2005 E. Gnani; S. Reggiani; M. Rudan; G. Baccarani
A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique
2005 S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. Denison; N. Jensen; G. Groos; M. Stecher
Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures
2005 S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; C. Corvasce; D. Barlini; M. Ciappa; W. Fichtner; M. Denison; N. Jensen; G. Groos; M. Stecher
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Compact double-gate MOSFET model comprising quantum-mechanical and non-static effects | Baccarani G.; Reggiani S. | 1999-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's | Reggiani S.; Valdinoci M.; Colalongo L.; Baccarani G. | 1999-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |
| A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects | Baccarani G.; Reggiani S. | 1999-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices | Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G. | 2000-01-01 | VLSI DESIGN | - | 1.01 Articolo in rivista | - |
| Two-qbit gates based on coupled quantum wires | Reggiani S.; Bertoni A.; Bordone P.; Brunetti R.; Jacoboni C.; Rudan M.; Baccarani G. | 2000-01-01 | - | IEEE | 4.01 Contributo in Atti di convegno | - |
| Performance limits of CMOS technology and perspectives of quantum devices | Baccarani G.; Reggiani S. | 2000-01-01 | COMPTES RENDUS DE L'ACADÉMIE DES SCIENCES. SÉRIE IV, PHYSIQUE, ASTROPHYSIQUE | - | 1.01 Articolo in rivista | - |
| Extraction method for the impact-ionization multiplication factor in silicon at large operating temperatures | Gnani E.; Reggiani S.; Rudan M.; Baccarani G. | 2002-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |
| Surface mobility in silicon at large operating temperature | Reggiani S.; Valdinoci A.; Colalongo L.; Rudan M.; Baccarani G.; Stricker A.; Illien F.; Felber N....; Fichtner W.; Mettler S.; Lindenkreuz S.; Zullino L. | 2002-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility | Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G.; Stricker A.D.; Illien F.; Felber... N.; Fichtner W.; Zullino L. | 2002-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| A single-scan algorithm for connected components labelling in a traffic monitoring application | Bevilacqua A.; Lanza A.; Baccarani G.; Rovatti R. | 2003-01-01 | - | Springer Berlin Heidelberg | 4.01 Contributo in Atti di convegno | - |
| Determination of the Hall voltage in devices with arbitrary aspect ratio and probe position | Rudan M.; Reggiani S.; Gnani E.; Baccarani G. | 2003-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |
| A new approach to the self-consistent solution of the Schroedinger-Poisson Equations in nanowire MOSFETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2004-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2004-01-01 | - | M. Lundstrum | 4.01 Contributo in Atti di convegno | - |
| The density-gradient correction as a disguised pilot wave of de Broglie | Rudan, Massimo; Gnani, Elena; Reggiani, Susanna; Baccarani, Giorgio | 2004-01-01 | - | Springer | 4.01 Contributo in Atti di convegno | - |
| A new approach to the self-consistent solution of the Schrödinger- Poisson equations in nanowire MOSFETs | Gnani E.; Reggiani S.; Rudan M.; Baccarani G. | 2004-01-01 | - | - | 4.01 Contributo in Atti di convegno | - |
| Investigation about the high temperature impact-ionization coefficient in silicon | S. REGGIANI; M. RUDAN; E. GNANI; G. BACCARANI | 2004-01-01 | - | s.n | 4.01 Contributo in Atti di convegno | - |
| Experimental extraction of the electron impact-ionization coefficient at large operating temperatures | S. REGGIANI; M. RUDAN; E. GNANI; BACCARANI G.; C. CORVASCE; D. BARLINI; M. CIAPPA; W. FICHTNER; M.... DENISON; N. JENSEN; G. GROOS; M. STECHER | 2004-01-01 | - | IEEE-EDS | 4.01 Contributo in Atti di convegno | - |
| On the Electrostatics of Double-Gate and Cylindrical Nanowire MOSFETs | E. Gnani; S. Reggiani; M. Rudan; G. Baccarani | 2005-01-01 | JOURNAL OF COMPUTATIONAL ELECTRONICS | - | 1.01 Articolo in rivista | - |
| A new numerical and experimental analysis tool for ESD devices by means of the transient interferometric technique | S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; S. Bychikhin; J. Kuzmik; D. Pogany; E. Gornik; M. ...Denison; N. Jensen; G. Groos; M. Stecher | 2005-01-01 | IEEE ELECTRON DEVICE LETTERS | - | 1.01 Articolo in rivista | - |
| Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures | S. Reggiani; E. Gnani; M. Rudan; G. Baccarani; C. Corvasce; D. Barlini; M. Ciappa; W. Fichtner; M.... Denison; N. Jensen; G. Groos; M. Stecher | 2005-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
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